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PDF 2SB1209 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1209 | |
| Descripción | Silicon PNP triple diffusion planer type(For low-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB1209 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SB1209
Silicon PNP triple diffusion planer type
For low-frequency amplification
s Features
q High collector to base voltage VCBO.
q High collector to emitter voltage VCEO.
q Low collector to emitter saturation voltage VCE(sat).
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–400
V
Collector to emitter voltage VCEO
–400
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–200
mA
Collector current
IC
–100
mA
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
IC = –100µA, IE = 0
IC = –500µA, IB = 0
IE = –100µA, IC = 0
–400
–400
–5
V
V
V
Forward current transfer ratio
hFE
VCE = –5V, IC = –30mA
40
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.6
V
Base to emitter saturation voltage VBE(sat)
IC = –50mA, IB = –5mA
–1.5 V
Transition frequency
fT VCB = –30V, IE = 20mA, f = 200MHz
50
MHz
Collector output capacitance
Cob
VCB = –30V, IE = 0, f = 1MHz
9 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1209.PDF ] | |
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