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PDF 2SB1207 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1207 | |
| Descripción | Silicon PNP epitaxial planer type(For low-voltage output amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB1207 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SB1207
Silicon PNP epitaxial planer type
For low-voltage output amplification
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–15
–10
–7
–1
– 0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –0.5A*2
VCE = –2V, IC = –1A*2
IC = –0.4A, IB = –8mA
IC = –0.4A, IB = –8mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min typ max Unit
–100 nA
–15 V
–10 V
–7 V
130 350
60
– 0.16 – 0.3
V
– 0.8 –1.2
V
130 MHz
22 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
R
S
hFE1 130 ~ 220 180 ~ 350
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1207.PDF ] | |
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