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What is 2SB1189?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Medium power transistor".


2SB1189 Datasheet PDF - ROHM Semiconductor

Part Number 2SB1189
Description Medium power transistor
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Transistors
2SB1189 / 2SB1238
Medium power transistor (80V, 0.7A)
2SB1189 / 2SB1238
!Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SD1767 / 2SD1859.
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
80
Collector-emitter voltage
VCEO
80
Emitter-base voltage
VEBO
5
Collector current
IC 0.7
Collector power
dissipation
2SB1189
2SB1238
PC
0.5
2
1
Junction temperature
Tj 150
Storage temperature
Tstg 55~+150
1 When mounted on a 40×40×0.7 mm ceramic board.
2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SB1189
MPT3
PQR
BD
T100
1000
2SB1238
ATV
PQR
TV2
2500
Unit
V
V
V
A
W 1
2
°C
°C
!External dimensions (Units : mm)
2SB1189
4.0
1.0 2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
2SB1238
6.8
(1) Base
(2) Collector
(3) Emitter
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
80
80
5
82
Typ.
0.2
100
14
Max.
0.5
0.5
0.4
390
20
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=−50µA
IC=−2mA
IE=−50µA
VCB=−50V
VEB=−4V
IC/IB=−500mA/50mA
VCE/IC=−3V/0.1A
VCE=−10V, IE=50mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz


Part Details

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