DataSheetWiki


2SB1166 fiches techniques PDF

Sanyo Semicon Device - PNP/NPN Epitaxial Planar Silicon Transistors

Numéro de référence 2SB1166
Description PNP/NPN Epitaxial Planar Silicon Transistors
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





1 Page

No Preview Available !





2SB1166 fiche technique
Ordering number:ENN2021A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1166/2SD1723
50V/8A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage.
· High fT.
· Excellent linearity of hFE.
· Fast switchint time.
Package Dimensions
unit:mm
2043B
[2SB1166/2SD1723]
8.0
4.0
2.0
2.7
1.6
0.8
0.8
0.6 0.5
( ) : 2SB1166
Specifications
Absolute Maximum Ratings at Ta = 25˚C
12 3
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
()60
()50
()6
()8
()12
1.2
20
150
55 to +150
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
hFE2
VCB=()40V, IE=0
VEB=()4V, IC=0
VCE=()2V, IC=()0.5A
VCE=()2V, IC=()6A
Gain-Bandwidth Product
fT VCE=()5V, IC=()1A
* : The 2SB1166/2SD1723 are classified by 0.5A hFE as follows :
Rank
Q
R
Ratings
min typ max
Unit
()1 µA
()1 µA
70* 400*
35
180 MHz
(130)
MHz
Continued on next page.
ST
hFE 70 to 140 100 to 200 140 to 280 200 to 400
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2021–1/4

PagesPages 4
Télécharger [ 2SB1166 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SB1160 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SB1161 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SB1162 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SB1163 SILICON POWER TRANSISTOR SavantIC
SavantIC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche