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Numéro de référence | 2SB1156 | ||
Description | Silicon PNP epitaxial planar type(For power switching) | ||
Fabricant | Panasonic Semiconductor | ||
Logo | |||
1 Page
Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–130
–80
–7
–30
–20
100
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2*
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
VCE = –2V, IC = –10A
IC = –8A, IB = – 0.4A
IC = –20A, IB = –2A
IC = –8A, IB = – 0.4A
IC = –20A, IB = –2A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –3A, IB1 = – 0.8A, IB2 = 0.8A,
VCC = –50V
–80
45
90
30
–10 µA
–50 µA
V
260
– 0.5
V
–1.5 V
–1.5 V
–2.5 V
25 MHz
0.5 µs
1.2 µs
0.2 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.
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Pages | Pages 3 | ||
Télécharger | [ 2SB1156 ] |
No | Description détaillée | Fabricant |
2SB1150 | PNP SILICON DARLINGTON TRANSISTOR | NEC |
2SB1151 | Low Collector Saturation Voltage | NEC |
2SB1151 | LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT | Unisonic Technologies |
2SB1151 | Silicon PNP Power Transistors | Savantic |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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