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PDF 2SB1124 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1124 | |
| Descripción | High-Current Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB1124 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Ordering number:ENN2019A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1124/2SD1624
High Current Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Large current capacity and wide ASO.
Package Dimensions
unit:mm
2038A
[2SB1124/2SD1624]
4.5
1.6 1.5
( ) : 2SB1124
Specifications
0.4 0.5
3 1.5 2
3.0
1
0.75
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)3A
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)50mA
* ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows :
Marking 2SB1124 : BG
Rank
R
S
T
U
2SD1624 : DG
hFE 100 to 200 140 to 280 200 to 400 280 to 560
Ratings
(–)60
(–)50
(–)6
(–)3
(–)6
500
1.5
150
–55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Ratings
min typ max
Unit
(–)1 µA
(–)1 µA
100*
560*
35
150 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019–1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SB1124.PDF ] | |
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