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PDF KDV215 Data sheet ( Hoja de datos )
| Número de pieza | KDV215 | |
| Descripción | SILICON EPITAXIAL PLANAR DIODE | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=6.5(Typ.)
Low Series Resistance : rS=0.4 (Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Peak Reverse Voltage
VR
VRM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
30
35 (RL=10 )
125
-55 125
UNIT
V
V
KDV215
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
1
G
H
2
D
MM
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A 2.50 +_ 0.1
B 1.25+_ 0.05
C 0.90 +_0.05
D 0.30+0.06/-0.04
E 1.70 +_ 0.05
F MIN 0.17
G 0.126 +_ 0.03
H 0~0.1
I 1.0 MAX
J 0.15 +_0.05
K 0.4 +_0.05
L 2 +4/-2
M 4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
IR VR=30V
IR VR=30V, (Ta=60 )
Capacitance
C2V
C25V
VR=2V, f=1MHz
VR=25V, f=1MHz
Capacitance Ratio
C2V/C25V
Series Resistance
rS VR=5V, f=470MHz
Note : Available in matched group for capacitance to 2.5%.
C(Max.)-C(Min.)
0.025
C(Min.)
(VR=2~25V)
Marking
Type Name
VA
MIN.
-
-
14.16
2.11
5.90
-
TYP.
-
-
-
-
6.50
0.4
MAX.
10
100
16.25
2.43
7.15
0.55
UNIT
nA
pF
-
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KDV215.PDF ] | |
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