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Numéro de référence | KDV202E | ||
Description | SILICON EPITAXIAL PLANAR DIODE | ||
Fabricant | KEC | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
FEATURES
High Capacitance Ratio : C0.2V/C2.3V =2.5(Min.)
Low Series Resistance : rs=0.6 (Max.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
VR
Tj
Tstg
RATING
6
150
-55 150
UNIT
V
KDV202E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
Marking
Type Name
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
Capacitance
Capacitance Ratio
IR1
IR2
C0.2V
C2.3V
C0.2V/C2.3V
Series Resistance
rS
TEST CONDITION
VR=6V
VR=6V, Tj=85
VR=0.2V, f=1MHz
VR=2.3V, f=1MHz
-
CT=30pF, f=100MHz
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE (C2.3V)
UNIT
(NONE)
7.2 11.2
A 7.2~8.7
B
8.3 9.7
pF
C 9.3~10.7
D 10.3~11.2
MARK
FA
F1
F2
F3
F4
MIN.
-
-
28.2
7.2
2.5
-
TYP.
-
-
-
-
-
0.35
MAX.
10
100
33.5
11.2
-
0.6
UNIT
nA
pF
2005. 5. 10
Revision No : 3
1/2
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Pages | Pages 2 | ||
Télécharger | [ KDV202E ] |
No | Description détaillée | Fabricant |
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