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NTMS4917N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTMS4917N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTMS4917N fiche technique
NTMS4917N
Power MOSFET
30 V, 10.5 A, NChannel, SO8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Steady
State
Power Dissipation
(Note 1)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
8.5
6.8
1.28
V
V
A
W
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 70°C
ID
7.1 A
5.7
Power Dissipation
(Note 2)
RqJA
TA = 25°C PD 0.88 W
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
Steady
State
TA = 25°C
TA = 70°C
ID
10.5 A
8.4
Power Dissipation
Steady TA = 25°C PD 1.95 W
RqJA, t v 10 s(Note 1) State
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
127 A
Operating Junction and Storage Temperature
TTsJtg,
55 to °C
150
Source Current (Body Diode)
IS 2.4 A
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 8 Apk, L = 1.0 mH, RG = 25 W)
EAS
32 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
97.4 °C/W
JunctiontoAmbient – t v 10 s (Note 1)
JunctiontoFoot (Drain)
RqJA
RqJF
64
25.9
JunctiontoAmbient – Steady State (Note 2)
RqJA 142.4
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
11 mW @ 10 V
15 mW @ 4.5 V
ID MAX
10.5 A
NChannel
D
G
S
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4917N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4917NR2G SO8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
www.Dat©AaSpShreeimle,itc24o0Und1.u1ncetotr
Components
Rev. 0
Industries,
LLC,
2011
1
Publication Order Number:
NTMS4917N/D

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