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NTMD5836NL fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTMD5836NL
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NTMD5836NL fiche technique
NTMD5836NL
Power MOSFET
40 V, Dual NChannel, SOIC8
Features
Asymmetrical N Channels
Low RDS(on)
Low Capacitance
Optimized Gate Charge
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
RDS(on) Max
ID Max
(Notes 1 and 2)
Channel 1
40 V
12 mW @ 10 V
11 A
16 mW @ 4.5 V
Channel 2
40 V
25 mW @ 10 V
6.5 A
30.8 mW @ 4.5 V
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces)
2. Only selected channel is been powered
1W applied on channel 1: TJ = 1 W * 85°C/W + 25°C = 110°C
http://onsemi.com
NChannel 1
D1
NChannel 2
D2
G1 G2
S1 S2
8
1
SOIC8
CASE 751
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
5836NL
AYWW G
G
1
S1 G1 S2 G2
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NTMD5836NLR2G SOIC8
(PbFree)
Shipping
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
March, 2011 Rev. 0
1
Publication Order Number:
NTMD5836NL/D

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