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Numéro de référence | NTMD5836NL | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
NTMD5836NL
Power MOSFET
40 V, Dual N−Channel, SOIC−8
Features
• Asymmetrical N Channels
• Low RDS(on)
• Low Capacitance
• Optimized Gate Charge
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
RDS(on) Max
ID Max
(Notes 1 and 2)
Channel 1
40 V
12 mW @ 10 V
11 A
16 mW @ 4.5 V
Channel 2
40 V
25 mW @ 10 V
6.5 A
30.8 mW @ 4.5 V
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces)
2. Only selected channel is been powered
1W applied on channel 1: TJ = 1 W * 85°C/W + 25°C = 110°C
http://onsemi.com
N−Channel 1
D1
N−Channel 2
D2
G1 G2
S1 S2
8
1
SOIC−8
CASE 751
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
5836NL
AYWW G
G
1
S1 G1 S2 G2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NTMD5836NLR2G SOIC−8
(Pb−Free)
Shipping†
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
March, 2011 − Rev. 0
1
Publication Order Number:
NTMD5836NL/D
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Pages | Pages 10 | ||
Télécharger | [ NTMD5836NL ] |
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