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Número de pieza | NTMD5838NL | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTMD5838NL
Power MOSFET
40 V, 8.9 A, 25 mW, Dual N−Channel SO−8
Features
• Low RDS(on)
• Low Capacitance
• Optimized Gate Charge
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Pulsed Drain
Current
TA = 25°C
Steady
State
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
t ≤10 s
TA = 70°C
TA = 25°C
TA = 70°C
tp = 10 ms
VDSS
VGS
ID
PD
ID
PD
IDM
40
±20
7.4
5.9
2.1
1.3
8.9
7.1
3.0
1.9
35
Unit
V
V
A
W
A
W
A
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
+150
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
IS
EAS
IAS
7.0 A
20 mJ
21 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient Steady State
(Notes 1 & 3)
RqJA
58
Junction−to−Ambient − t ≤10 s (Note 1)
RqJA
40 °C/W
Junction−to−Ambient Steady State (Note 2)
RqJA
106
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
3. Both channels receive equivalent power dissipation
1 W applied on each channel: TJ = 2 W * 58°C/W + 25°C = 141°C
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
25 mW @ 10 V
30.8 mW @ 4.5 V
ID MAX
8.9 A
N−CHANNEL MOSFET
DD
GG
SS
MARKING DIAGRAM/
PIN ASSIGNMENT
D1 D1 D2 D2
8
SO−8
CASE 751
STYLE 11
D5838N
AYWW
G
1
S1 G1 S2 G2
(Top View)
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMD5838NLR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
April, 2011 − Rev. 0
1
Publication Order Number:
NTMD5838NL/D
1 page NTMD5838NL
TYPICAL PERFORMANCE CURVES
100
D = 0.5
10
0.2
0.1
0.05
0.02
1
0.01
0.1
0.01
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 13. Thermal Response
10 100 1000
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTMD5838NL.PDF ] |
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NTMD5838NL | Power MOSFET ( Transistor ) | ON Semiconductor |
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