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NTD4969N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTD4969N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTD4969N fiche technique
NTD4969N
Power MOSFET
30 V, 41 A, Single NChannel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
12.7
9.0
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
TA = 25°C
TC = 25°C
TC = 100°C
PD
ID
PD
ID
2.56 W
9.4 A
6.6
1.38 W
41 A
29
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
26.3 W
Pulsed Drain
Current
tp=10ms TA = 25°C
IDM
150 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 19 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxPkg
TJ,
TSTG
IS
dV/dt
EAS
40
55 to
+175
24
6.0
18
A
°C
A
V/ns
mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9.0 mW @ 10 V
19 mW @ 4.5 V
D
ID MAX
41 A
G
S
NCHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4969N = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
April, 2011 Rev. 1
1
Publication Order Number:
NTD4969N/D

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