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Numéro de référence | IPP60R165CP | ||
Description | Power Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPP60R165CP
650 V
0.165 Ω
39 nC
PG-TO220
CoolMOS CP is specially designed for:
• Hard switching topologies for Server and Telecom
Type
IPP60R165CP
Package
PG-TO220
Ordering Code
SP000084279
Marking
6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=7.9 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=7.9 A, V DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
dv /dt
V GS
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
P tot T C=25 °C
T j, T stg
M3 and M3.5 screws
Value
21
13
61
522
0.79
7.9
50
±20
±30
192
-55 ... 150
60
www.DRateavS.he2e.t24U.net
page 1
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-08-28
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Pages | Pages 10 | ||
Télécharger | [ IPP60R165CP ] |
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