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PDF IPD640N06LG Data sheet ( Hoja de datos )
| Número de pieza | IPD640N06LG | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD640N06LG (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V DS
R DS(on),max
ID
IPD640N06L G
60 V
64 mΩ
18 A
Type
IPD640N06L G
TPyapcekage
IMPaDr6k4in0gN06L G
PG-TO252-3
640NP0G6L-TO252-3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C1)
Avalanche energy, single pulse
E AS I D=18 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=18 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
www.DRateavS.he1e.t44U.net
page 1
Value
18
12
72
43
6
±20
47
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2008-09-01
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
30
10 V
5.5 V
5V
20
4.5 V
4V
10
IPD640N06L G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
120
3.5 V
4V
100
4.5 V
80
5V
60 5.5 V
10 V
40
3.5 V
3V
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
30
20
0
30
10 20
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
25
30
25
20
25 °C
20
15
15 175 °C
10
10
5
5
0
012345
V GS [V]
0
0
Rev. 1.4
page 5
5 10 15
I D [A]
20
2008-09-01
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD640N06LG.PDF ] | |
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