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PDF IPB65R280E6 Data sheet ( Hoja de datos )
| Número de pieza | IPB65R280E6 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB65R280E6 (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOS™ E6 Power Transistor
IPx65R280E6
Data Sheet
Rev. 2.0, 2010-04-26
Final
Industrial & Multimarket
www.DataSheet4U.net
1 page  
3 Thermal characteristics
650V CoolMOS™ E6 Power Transistor
IPx65R280E6
Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP65R280E6),TO-247 (IPW65R280E6),TO-262 (IPI65R280E6)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
Thermal resistance, junction -
ambient
RthJA
-
-
-
-
1.2 °C/W
62 leaded
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260 °C 1.6 mm (0.063 in.)
from case for 10 s
Table 4 Thermal characteristics TO-220FullPAK (IPA65R280E6)
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
Thermal resistance, junction -
ambient
RthJA
-
-
-
-
3.9
80
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Unit Note /
Test Condition
°C/W
leaded
°C 1.6 mm (0.063 in.)
from case for 10 s
Table 5 Thermal characteristics TO-263 (IPB65R280E6)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
Thermal resistance, junction -
ambient
RthJA
-
-
-
-
1.2 °C/W
62 SMD version, device
on PCB, minimal
footprint
- 35 -
SMD version, device
on PCB, 6cm2 cooling
area1)
Soldering temperature,
Tsold
wave- & reflow soldering allowed
-
-
260 °C reflow MSL1
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
5 Rev. 2.0, 2010-04-26
5 Page 
Table 16
Typ. transfer characteristics
650V CoolMOS™ E6 Power Transistor
IPx65R280E6
Electrical characteristics diagrams
Typ. gate charge
ID=f(VGS); VDS=20V
Table 17
Avalanche energy
VGS=f(Qgate), ID=4.4 A pulsed
Drain-source breakdown voltage
EAS=f(Tj); ID=2.4 A; VDD=50 V
Final Data Sheet
VBR(DSS)=f(Tj); ID=0.25 mA
11 Rev. 2.0, 2010-04-26
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet IPB65R280E6.PDF ] | |
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