DataSheetWiki


IPB016N06L3G fiches techniques PDF

Infineon Technologies - OptiMOS3 Power Transistor

Numéro de référence IPB016N06L3G
Description OptiMOS3 Power Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





1 Page

No Preview Available !





IPB016N06L3G fiche technique
Type
OptiMOS™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB016N06L3 G
IPB016N06L3 G
Product Summary
V DS
R DS(on),max
ID
60 V
1.6 m
180 A
Package
Marking
PG-TO-263-7
016N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse4) E AS I D=100 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 293 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Value
180
180
720
634
±20
250
-55 ... 175
55/175/56
www.DRateavS.he2e.t34U.net
page 1
Unit
A
mJ
V
W
°C
2009-11-16

PagesPages 9
Télécharger [ IPB016N06L3G ]


Fiche technique recommandé

No Description détaillée Fabricant
IPB016N06L3G OptiMOS3 Power Transistor Infineon Technologies
Infineon Technologies

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche