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PDF IPA65R600E6 Data sheet ( Hoja de datos )
| Número de pieza | IPA65R600E6 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPA65R600E6 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
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MOSFET
Metall Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOSTM E6 Power Transistor
IPx65R600E6
Data Sheet
Rev. 2.2, 2016-08-04
Power Management & Multimarket
1 page  
3 Thermal characteristics
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 3
Parameter
Thermal characteristics TO-220 (IPP65R600E6)
Symbol
Values
Thermal resistance, junction-case
Thermal resistance, junction-
ambient
RthJC
RthJA
Min.
–
–
Typ.
–
–
Max.
2.0
62
Soldering temperature,
Tsold
–
–
260
wavesoldering only allowed at leads
Unit
°C/W
°C
Note/Test Condition
leaded
1.6mm (0.063 in.) from
case for 10 s
Table 4
Thermal characteristics TO-220 FullPAK (IPA65R600E6)
Parameter
Symbol
Values
Unit
Thermal resistance, junction-case
Thermal resistance, junction-
ambient
RthJC
RthJA
Min.
–
–
Typ.
–
–
Max.
4.5
80
°C/W
Soldering temperature,
Tsold
–
–
260 °C
wavesoldering only allowed at leads
Note/Test Condition
leaded
1.6mm (0.063 in.) from
case for 10 s
Table 5
Thermal characteristics TO-252 (IPD65R600E6)
Parameter
Symbol
Values
Thermal resistance, junction-case
RthJC
Thermal resistance, junction-ambient RthJA
Min.
–
–
Typ.
–
–
Max.
2.0
62
35
Soldering temperature,
Tsold
–
–
260
wave- &reflowsoldering only allowed
Unit
°C/W
°C
Note/Test Condition
SMD version, device on
PCB, minimal footprint
SMD version, device on
PCB, 6cm2 cooling area1)
Reflow MSL1
1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical
without air stream cooling.
Final Data Sheet
5 Rev. 2.2, 2016-08-04
5 Page 
Table 16
Typ. transfer characteristics
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Typ. gate charge
ID=f(VGS); VDS=20V
Table 17
Avalanche energy
VGS=f(Qgate), ID=4.9 A pulsed
Drain-source breakdown voltage
EAS=f(Tj); ID=1.8 A; VDD=50 V
Final Data Sheet
VBR(DSS)=f(Tj); ID=1.0 mA
11 Rev. 2.2, 2016-08-04
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet IPA65R600E6.PDF ] | |
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