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What is 2SA838?

This electronic component, produced by the manufacturer "Panasonic Semiconductor", performs the same function as "Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)".


2SA838 Datasheet PDF - Panasonic Semiconductor

Part Number 2SA838
Description Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)
Manufacturers Panasonic Semiconductor 
Logo Panasonic Semiconductor Logo 


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Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC1359
s Features
q High transition frequency fT.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–30
–20
–5
–30
250
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
ICBO
ICEO
IEBO
hFE*
VCE(sat)
VBE
fT
NF
Reverse transfer impedance
Common emitter reverse transfer
capacitance
Zrb
Cre
VCB = –10V, IE = 0
VCE = –20V, IB = 0
– 0.1
–100
µA
VEB = –5V, IC = 0
–10 µA
VCE = –10V, IC = –1mA
70 220
IC = –10mA, IB = –1mA
– 0.1
V
VCE = –10V, IC = –1mA
– 0.7
V
VCB = –10V, IE = 1mA, f = 200MHz 150
300
MHz
VCB = –10V, IE = 1mA, f = 5MHz
2.8 4.0 dB
VCE = –10V, IC = –1mA, f = 2MHz
22 50
VCE = –10V, IC = –1mA,
f = 10.7MHz
1.2 2.0 pF
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SA838 electronic component.


Information Total 2 Pages
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