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PDF 2SA817A Data sheet ( Hoja de datos )
| Número de pieza | 2SA817A | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA817A
Driver-Stage Amplifier Applications
Voltage Amplifier Applications
2SA817A
Unit: mm
• Complementary to 2SC1627A.
• Driver stage application of 30 to 35 watts amplifiers.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
−80
−80
−5
−400
400
800
150
−55 to 150
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-92MOD
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA817A.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| 2SA817 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
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