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PDF 2SA817 Data sheet ( Hoja de datos )
| Número de pieza | 2SA817 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA817
2SA817
Audio Frequency Amplifier Applications
Unit: mm
· Complementary to 2SC1627.
· Suitable for driver of 20~25 watts audio amplifiers.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-80
-80
-5
-300
-60
600
150
-55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = -50 V, IE = 0
IEBO
VEB = -5 V, IC = 0
V (BR) CEO IC = -5 mA, IB = 0
hFE (1)
VCE = -2 V, IC = -50 mA
(Note)
hFE (2) VCE = -2 V, IC = -200 mA
VCE (sat) IC = -200 mA, IB = -20 mA
VBE VCE = -2 V, IC = -5 mA
fT VCE = -10 V, IC = -10 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240
Min Typ. Max Unit
¾ ¾ -0.1 mA
¾ ¾ -0.1 mA
-80 ¾
¾
V
70 ¾ 240
40 ¾ ¾
¾
¾ -0.4
V
-0.55 ¾ -0.8
V
70 100 ¾ MHz
¾ 14 ¾ pF
1 2003-03-24
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA817.PDF ] | |
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