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PDF LX5541 Data sheet ( Hoja de datos )

Número de pieza LX5541
Descripción Co-Package 2.3 - 2.5 GHz HBT Power Amplifier & pHEMT Low Noise Amplifier
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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LX5541
TM ® Co-Package 2.3 – 2.5 GHz HBT Power Amp +
pHEMT Low Noise Amplifier + SPDT Switch
PRODUCTION DATA SHEET
DESCRIPTION
LX5541 is a co-package RFIC For 19dBm OFDM output power
consisting of an InGaP/GaAs (64QAM, 54Mbps) at the antenna port,
Heterojunction Bipolar Transistor the PA including SPDT switch provides
www.(DHatBaSThe)et4pUo.wneet r amplifier, an InGaAs a low EVM (Error-Vector Magnitude)
pseudomorphic HEMT (pHEMT) low of about 3%, and consumes 145 mA
noise amplifier, and a SPDT switch. total DC current.
All three RF devices are optimized for The LNA (including SPDT switch
WLAN applications in the 2.3 to 2.5 loss) offers 13 dB gain, 2 dB noise
GHz frequency range.
figure (switch contribution included)
The PA is implemented as a two- and a high input IP3 of +5 dBm at 10
stage monolithic microwave integrated mA DC current.
circuit (MMIC) with active bias and LX5541 is available in a low profile
output pre-matching. The LNA is fully 16-pin 3mmx3mm micro-lead package
matched internally, and the LNA is (MLPQ-16L). LX5541 with a PA,
connected to the RX port of SPDT LNA and SPDT integrated in a small,
switch directly inside the MLPQ low profile, and low thermal resistance
package.
package offers an ideal compact front
Both PA and LNA operate with end solution for IEEE 802.11b/g/n
single low voltage supply of 3.3V. applications.
The PA (including SPDT switch loss)
offers 27 dB power gain between 2.3-
2.5GHz, at a low quiescent current of
90mA.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Small Footprint: 3x3mm2
Low Profile: 0.45mm
2.3-2.5GHz Operation
Single-Polarity 3.3V
Supply
On-Chip Active Bias Circuit
for both PA and LNA
TX Features:
Input matched PA
Quiescent Current ~ 90mA
Power Gain ~ 27 dB *
Total Current ~ 145mA for
Pout=19 dBm OFDM *
EVM~3 % at 19dBm (2%
at 17dBm) 54Mbps/64QAM
RX Features:
LNA Gain ~ 13 dB *
LNA Noise Figure ~ 2 dB *
LNA Input IP3 ~ +5dBm *
LNA On-Chip Input/Output
Match
* Including SPDT switch loss
APPLICATIONS
IEEE 802.11b/g/n
BLOCK DIAGRAM
Vdd
RxOut
Vcc
Vref
TxIn
Det
Vdd
LNAO
Vcc
Vb1/Vb2
PAIn
DetO
Ctl1
Ctl2
Ant
SwTxI
PAOut
DetI
Ext.
Match
Ctl1
Ctl2
Ant
Copyright 2006
Rev. 1.3, 2008-02-11
Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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