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PDF 2SA562TM Data sheet ( Hoja de datos )
| Número de pieza | 2SA562TM | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA562TM
2SA562TM
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Unit: mm
· Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
· 1 watt amplifier application.
· Complementary to 2SC1959.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-35
-30
-5
-500
-100
500
150
-55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = -35 V, IE = 0
IEBO
VEB = -5 V, IC = 0
hFE (1)
VCE = -1 V, IC = -100 mA
(Note)
hFE (2)
VCE = -6 V, IC = -400 mA
(Note)
VCE (sat)
VBE
fT
Cob
IC = -100 mA, IB = -10 mA
VCE = -1 V, IC = -100 mA
VCE = -6 V, IC = -20 mA
VCB = -6 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240
hFE (2) classification O: 25 (min), Y: 40 (min)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
¾ ¾ -0.1 mA
¾ ¾ -0.1 mA
70 ¾ 240
25 ¾ ¾
¾ -0.1 -0.25 V
¾ -0.8 -1.0
V
¾ 200 ¾ MHz
¾ 13 ¾ pF
1 2003-03-27
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA562TM.PDF ] | |
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