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SeCoS - PNP Silicon Epitaxial Planar Transistor

Numéro de référence BCPA94
Description PNP Silicon Epitaxial Planar Transistor
Fabricant SeCoS 
Logo SeCoS 





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BCPA94 fiche technique
Elektronische Bauelemente
BCPA94
-0.5 A, -400 V
PNP Silicon Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
www.DTahtaeShBeeCt4UP.Ane9t 4 is designed for application requires high voltage.
FEATURES
High VoltageVCEO=400V (min) at IC=1mA
High Current gainIC=300mA at 25°C
Complementary with BCPA44
SOT-89
MARKING
A94
Date Code
BCE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction & Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
Ratings
-400
-400
-6
-0.5
1
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter current
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
hFE1
hFE2
hFE3
hFE4
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)
Min.
-400
-400
-6
-
-
-
40
50
45
20
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max. Unit
Test Conditions
-
-
-
-100
-500
-100
-
300
-
-
-350
-500
-750
-750
V IC= -100A, IE=0
V IC= -1mA, IB=0
V IE= -100A, IC=0
nA VCB= -400V, IE=0
nA VCE= -400V, VBE=0
nA VEB= -6V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
IC= -1mA, IB= -0.1mA
mV IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
mV IC= -10mA, IB= -1mA
* Pulse Test: Pulse Width 380μs, Duty Cycle2%
http://www.SeCoSGmbH.com/
11-Jun-2010 Rev. B
Any changes of specification will not be informed individually.
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