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IDH05S60C fiches techniques PDF

Infineon Technologies - Schottky Diode

Numéro de référence IDH05S60C
Description Schottky Diode
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IDH05S60C fiche technique
2ndGeneration thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
www.DataSheet4U.net
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
IDH05S60C
600 V
12 nC
5A
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDH05S60C
PG-TO220-2 D05S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous forward current
RMS forward current
IF
I F,RMS
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C<140 °C
f =50 Hz
T C=25 °C, t p=10 ms
5
7.5
42
Unit
A
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs
i ²t value
i 2dt
T C=25 °C, t p=10 ms
Repetitive peak reverse voltage
V RRM
Diode dv/dt ruggedness
dv/ dt V R = 0….480V
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
Rev. 2.0
T sold
M3 and M3.5 screws
1.6mm (0.063 in.) from
case for 10s
page 1
21
180
9
600
50
55
-55 ... 175
60
260
A2s
V
V/ns
W
°C
Mcm
°C
2010-04-27

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