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IDH04SG60C fiches techniques PDF

Infineon Technologies - Schottky Diode

Numéro de référence IDH04SG60C
Description Schottky Diode
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IDH04SG60C fiche technique
3rd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
Product Summary
VDC
QC
IF; TC< 130 °C
IDH04SG60C
600 V
4.5 nC
4A
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
IDH04SG60C
Package
PG-TO220-2
Marking
D04G60C
Pin 1
C
Pin 2
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I F T C<130 °C
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
I F,max
i 2dt
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Repetitive peak reverse voltage
Diode dv/dt ruggedness
V RRM
dv/ dt
T j=25 °C
VR= 0….480 V
Power dissipation
P tot T C=25 °C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
Mounting torque
T j, T stg
T sold
1.6mm (0.063 in.)
from case for 10s
M3 and M3.5 screws
Value
4
18
13.5
120
1.8
0.93
600
50
43
-55 ... 175
260
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
Rev. 2.4
page 1
2012-12-12

PagesPages 7
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