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PDF IDD04E120 Data sheet ( Hoja de datos )
| Número de pieza | IDD04E120 | |
| Descripción | Fast Switching EmCon Diode | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IDD04E120 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Fast Switching EmCon Diode
Feature
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
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IDP04E120
Product Summary
VRRM
IF
VF
Tjmax
1200
4
1.65
150
V
A
V
°C
PG-TO220-2-2.
Type
IDP04E120
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
PG-TO220-2-2. Q67040-S4388 D04E120 C A -
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continous forward current
TC=25°C
TC=90°C
VRRM
IF
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25°C
TC=90°C
IFSM
IFRM
Ptot
Operating and storage temperature
Soldering temperature
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
TS
Value
1200
11.2
7.1
28
16.5
43.1
20.6
-55...+150
260
Unit
V
A
W
°C
°C
Rev.2.1
Page 1
2005-02-24
1 page  
IDP04E120
5 Typ. reverse recovery time
trr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
500
ns
6 Typ. reverse recovery charge
Qrr=f(diF/dt)
parameter: VR = 800V, Tj = 125 °C
900
nC
8A
400 800
8A
350 4A 750
2A
300 700
250 650 4A
200 600
150 550
100 500
2A
50 450
2000 300 400 500 600 700 800 A/µs 1000
diF/dt
7 Typ. reverse recovery current
Irr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
12
A 8A
4A
2A
10
9
402000 300 400 500 600 700 800 A/µs 1000
diF/dt
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 800V, Tj = 125°C
20
16
8A
14
4A
2A
12
8 10
78
6
6
4
52
2400 300 400 500 600 700 800 A/µs 1000
diF/dt
Rev.2.1
Page 5
2000 300 400 500 600 700 800 A/µs 1000
diF/dt
2005-02-24
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IDD04E120.PDF ] | |
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