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IDC08S120E fiches techniques PDF

Infineon Technologies - Schottky Diode

Numéro de référence IDC08S120E
Description Schottky Diode
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IDC08S120E fiche technique
1200V thinQ!TM SiC Schottky Diode
IDC08S120E
Features:
Applications:
Revolutionary Semiconductor Material -
Silicon Carbide
Motor Drives / Solar Inverters
High Voltage CCM PFC
Switching Behaviour Benchmark
Switch Mode Power Supplies
No Reverse Recovery / No Forward
Recovery
High Voltage Multipliers
Temperature Independent Switching
Behaviour
www.QDautaaSlhifeieet4dU.Anectcording to JEDEC1) Based on
Target Applications
A
C
Chip Type
IDC08S120E
VBR
IF
Die Size
1200V 7.5A 2.012 x 2.012 mm2
Package
sawn on foil
Mechanical Parameters
Raster size
Anode pad size
Area total
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
2.012 x 2.012
1.476 x 1.476
mm2
4.05
362 µm
100 mm
1652
Photoimide
3200 nm Al
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, 350µm
∅ ≥ 0.3 mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009

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