DataSheetWiki


IDC05S60CE fiches techniques PDF

Infineon Technologies - Schottky Diode

Numéro de référence IDC05S60CE
Description Schottky Diode
Fabricant Infineon Technologies 
Logo Infineon Technologies 





1 Page

No Preview Available !





IDC05S60CE fiche technique
2nd generation thinQ!TM SiC Schottky Diode
IDC05S60CE
Features:
Applications:
Revolutionary semiconductor material -
Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on the switching
behavior
No forward recovery
www.HDaigtahShseeut4rUg.enetcurrent capability
SMPS, PFC, snubber
A
C
Chip Type
IDC05S60CE
VBR
600V
IF
5A
Die Size
1.45 x 1.162 mm2
Package
sawn on foil
Mechanical Parameter
Raster size
Anode pad size
Area total
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Anode metal
Cathode metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
1.45x 1.162
1.213 x 0.925
mm2
1.68
355 µm
100 mm
4051
Photoimide
3200 nm Al
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, 350µm
∅ ≥ 0.3 mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009

PagesPages 4
Télécharger [ IDC05S60CE ]


Fiche technique recommandé

No Description détaillée Fabricant
IDC05S60C 2nd generation thinQ! SiC Schottky Diode Infineon Technologies
Infineon Technologies
IDC05S60CE Schottky Diode Infineon Technologies
Infineon Technologies

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche