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Numéro de référence | IDC05S60CE | ||
Description | Schottky Diode | ||
Fabricant | Infineon Technologies | ||
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1 Page
2nd generation thinQ!TM SiC Schottky Diode
IDC05S60CE
Features:
Applications:
• Revolutionary semiconductor material -
Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching
behavior
• No forward recovery
w• ww.HDaigtahShseeut4rUg.enetcurrent capability
•
SMPS, PFC, snubber
A
C
Chip Type
IDC05S60CE
VBR
600V
IF
5A
Die Size
1.45 x 1.162 mm2
Package
sawn on foil
Mechanical Parameter
Raster size
Anode pad size
Area total
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Anode metal
Cathode metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
1.45x 1.162
1.213 x 0.925
mm2
1.68
355 µm
100 mm
4051
Photoimide
3200 nm Al
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤ 350µm
∅ ≥ 0.3 mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009
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Pages | Pages 4 | ||
Télécharger | [ IDC05S60CE ] |
No | Description détaillée | Fabricant |
IDC05S60C | 2nd generation thinQ! SiC Schottky Diode | Infineon Technologies |
IDC05S60CE | Schottky Diode | Infineon Technologies |
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