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PDF 2SB952A Data sheet ( Hoja de datos )
| Número de pieza | 2SB952A | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB0952 (2SB952), 2SB0952A (2SB952A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For low-voltage switching
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0952 VCBO
2SB0952A
−40
−50
Collector-emitter voltage 2SB0952 VCEO
(Base open)
2SB0952A
−20
−40
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
−7
−12
30
1.3
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0952 VCEO
2SB0952A
IC = −10 mA, IB = 0
−20
−40
V
Collector-base cutoff
current (Emitter open)
2SB0952 ICBO
2SB0952A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
Cob
VCB = −40 V, IE = 0
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −2 A
IC = −5 A, IB = − 0.16 A
IC = −5 A, IB = − 0.16 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
VCB = −10 V, IE = 0, f = 1 MHz
45
60
−50 µA
−50
−50 µA
260
− 0.6 V
−1.5 V
150 MHz
140 MHz
Turn-on time
Storage time
Fall time
ton IC = −2 A
tstg IB1 = −66 mA, IB2 = 66 mA
tf VCC = −20 V
0.1 µs
0.5 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE2
R
60 to 120
Q
90 to 180
P
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2003
SJD00031AED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SB952A.PDF ] | |
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