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Número de pieza | 2SB946 | |
Descripción | Power Transistors | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB946 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Power Transistors
2SB0946 (2SB946)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For power switching
Complementary to 2SD1271
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
VCBO
VCEO
VEBO
IC
ICP
PC
−130
−80
−7
−7
−15
40
dissipation
Junction temperature
Storage temperature
Ta = 25°C
2
Tj 150
Tstg −55 to +150
Unit
V
V
V
A
A
W
°C
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −100 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −3 A
IC = −5 A, IB = − 0.25 A
IC = −5 A, IB = − 0.25 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
IC = −3 A, IB1 = − 0.3 A, IB2 = 0.3 A
VCC = −50 V
−80
45
60
V
−10 µA
−50 µA
260
− 0.5 V
−1.5 V
30 MHz
0.5 µs
1.5 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Publication date: February 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00025BED
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SB946.PDF ] |
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