DataSheetWiki


2SB0944 fiches techniques PDF

Panasonic Semiconductor - Power Transistors

Numéro de référence 2SB0944
Description Power Transistors
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





2SB0944 fiche technique
Power Transistors
2SB0944 (2SB944)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For power switching
Complementary to 2SD1269
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory linearity of forward current transfer ratio hFE
Large collector current IC
Full-pack package which can be installed to the heat sink with one screw.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
VCBO
VCEO
VEBO
IC
ICP
PC
130
80
7
4
8
35
dissipation
Junction temperature
Storage temperature
Ta = 25°C
2
Tj 150
Tstg 55 to +150
Unit
V
V
V
A
A
W
°C
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0
80
V
Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0
10 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
50 µA
Forward current transfer ratio
hFE1 VCE = −2 V, IC = − 0.1 A
45
hFE2 * VCE = −2 V, IC = −1 A
90 260
Collector-emitter saturation voltage
VCE(sat) IC = −3 A, IB = − 0.15 A
0.5 V
Base-emitter saturation voltage
VBE(sat) IC = −3 A, IB = − 0.15 A
1.5 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.15 µs
Storage time
tstg VCC = −50 V
0.80 µs
Fall time
tf
0.15 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Publication date: February 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00023BED
1

PagesPages 4
Télécharger [ 2SB0944 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SB0940 Power Transistors Panasonic Semiconductor
Panasonic Semiconductor
2SB0940A Power Transistors Panasonic Semiconductor
Panasonic Semiconductor
2SB0942 Power Transistors Panasonic Semiconductor
Panasonic Semiconductor
2SB0942A Power Transistors Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche