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PDF 2SB942 Data sheet ( Hoja de datos )
| Número de pieza | 2SB942 | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB0942 (2SB942), 2SB0942A (2SB942A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1267, 2SD1267A
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity
• Large collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0942 VCBO
2SB0942A
−60
−80
Collector-emitter voltage 2SB0942 VCEO
(Base open)
2SB0942A
−60
−80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
−4
−8
40
2
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0942 VCEO
2SB0942A
IC = −30 mA, IB = 0
−60
−80
V
Base-emitter voltage
VBE VCE = −4 V, IC = −3 A
−2 V
Collector-emitter
2SB0942 ICES
cutoff current (E-B short) 2SB0942A
VCE = −60 V, VBE = 0
VCE = −80 V, VBE = 0
−400
−400
µA
Collector-emitter cutoff current (Base open) ICEO VCE = −30 V, IB = 0
−700 µA
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
IEBO
hFE1 *
VEB = −5 V, IC = 0
VCE = −4 V, IC = −1 A
−1 mA
40 250
hFE2 VCE = −4 V, IC = −3 A
15
Collector-emitter saturation voltage
VCE(sat) IC = −4 A, IB = − 0.4 A
−1.5 V
Transition frequency
fT VCE = −10 V, IC = − 0.1 A, f = 10 MHz
30
MHz
Turn-on time
ton IC = −4 A, IB1 = − 0.4 A, IB2 = 0.4 A 0.2 µs
Storage time
tstg VCC = −50 V
0.5 µs
Fall time
tf
0.2 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1
40 to 90
70 to 150
120 to 250
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00022BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB942.PDF ] | |
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