|
|
Número de pieza | 2SB933 | |
Descripción | Power Transistors | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB933 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Power Transistors
2SB0933 (2SB933)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For Power switching
Complementary to 2SD1256
8.5±0.2
6.0±0.2
Unit : mm
3.4±0.3
1.0±0.1
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−130
−80
−7
−5
−10
40
1.3
150
−55 ∼ +150
Unit
V
V
V
A
A
W
°C
°C
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0
−80
V
Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0
−10 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
−50 µA
Forward current transfer ratio
hFE1 VCE = −2 V, IC = − 0.1 A
45
hFE2 * VCE = −2 V, IC = −2 A
90 260
Base-emitter voltage
VBE(sat) IC = −4 A, IB = − 0.2 A
−1.5 V
Collector-emitter saturation voltage
VCE(sat) IC = −4 A, IB = − 0.2 A
− 0.5 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton IC = −2 A,
0.13 µs
Storage time
tstg IB1 = − 0.2 A, IB2 = 0.2 A
0.5 µs
Fall time
tf VCC = −50 V
0.13 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Publication date: April 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00015BED
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SB933.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SB930 | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
2SB930 | Transistor | TY Semiconductor |
2SB930A | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
2SB930A | Transistor | Kexin |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |