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PDF 2SB929 Data sheet ( Hoja de datos )
| Número de pieza | 2SB929 | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB0929 (2SB929), 2SB0929A (2SB929A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For power amplification
Complementary to 2SD1252, 2SD1252A
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0929 VCBO
2SB0929A
−60
−80
Collector-emitter voltage 2SB0929 VCEO
(Base open)
2SB0929A
−60
−80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
VEBO
IC
ICP
−5
−3
−5
Collector power dissipation
Ta = 25°C
PC
35
1.3
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Unit
V
V
V
A
A
W
°C
°C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0929 VCEO
2SB0929A
IC = −30 mA, IB = 0
−60
−80
V
Collector-emitter cutoff 2SB0929 ICES VCE = −60 V, VBE = 0
−200 µA
current (E-B short)
2SB0929A
VCE = −80 V, VBE = 0
−200
Collector-emitter cutoff 2SB0929 ICEO VCE = −30 V, IB = 0
−300 µA
current (Base open)
2SB0929A
VCE = −60 V, IB = 0
−300
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
−1 mA
Forward current transfer ratio
hFE1 * VCE = −4 V, IC = −1 A
70 250
hFE2 VCE = −4 V, IC = −3 A
10
Base-emitter voltage
VBE VCE = −4 V, IC = −3 A
−1.8 V
Collector-emitter saturation voltage
VCE(sat) IC = −3 A, IB = −0.375 A
−1.2 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton IC = −1 A,
0.5 µs
Strage time
tstg IB1 = − 0.1 A, IB2 = 0.1 A
1.2 µs
Fall time
tf VCC = −50 V
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJD00011BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB929.PDF ] | |
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