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PDF NCP700B Data sheet ( Hoja de datos )
| Número de pieza | NCP700B | |
| Descripción | BiCMOS RF LDO Regulator | |
| Fabricantes | ON Semiconductor | |
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NCP700B
200 mA, Ultra Low Noise,
High PSRR, BiCMOS RF LDO
Regulator
Noise sensitive RF applications such as Power Amplifiers in cell
phones and precision instrumentation require very clean power
supplies. The NCP700B is 200 mA LDO that provides the engineer
with a very stable, accurate voltage with ultra low noise and very high
Power Supply Rejection Ratio (PSRR) suitable for RF applications. In
order to optimize performance for battery operated portable
applications, the NCP700B employs an advanced BiCMOS process to
combine the benefits of low noise and superior dynamic performance
of bipolar elements with very low ground current consumption at full
loads offered by CMOS.
Furthermore, in order to provide a small footprint for space
constrained applications, the NCP700B is stable with small, low value
capacitors and is available in a very small WDFN6 1.5 mm x 1.5 mm
and TSOP−5 package.
Features
• Output Voltage Options:
♦ 1.8 V, 2.8 V, 3.0 V, 3.3 V
♦ Contact Factory for Other Voltage Options
• Excellent Line and Load Regulation
• Ultra Low Noise (typ. 10 mVrms)
• Very High PSRR (typ 82 dB @ 1 kHz)
• Stable with Ceramic Output Capacitors as low as 1 mF
• Very Low Ground Current (typ. 70 mA @ no load)
• Low Disable Mode Current (max. 1 mA)
• Active Discharge Circuit
• Current Limit Protection
• Thermal Shutdown Protection
• These are Pb−Free Devices
Applications
• Smartphones / PDAs / Palmtops / GPS
• Cellular Telephones (Power Amplifier)
• Noise Sensitive Applications (RF, Video, Audio)
• Analog Power Supplies
• Battery Supplied Devices
http://onsemi.com
MARKING
DIAGRAM
WDFN6
CASE 511BJ
1
XM
G
5
1
TSOP−5
SN SUFFIX
CASE 483
5
XXXAYW
G
1
X, XXX = Specific Device Code
M = Date Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
PIN CONNECTIONS
IN 1
6
GND 2
5
OUT 3
4
(Top View)
EN
NC
BYP
IN 1
5 OUT
GND 2
EN 3
4 BYP
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 19 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 0
1
Publication Order Number:
NCP700B/D
1 page  
NCP700B
TYPICAL CHARACTERISTICS
1.836
1.824
1.812
1.800
1.788
1.776
1.764
−40
VIN = 2.5 V,
CIN = COUT = 1 mF,
Cnoise = 10 nF
−20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Output Voltage vs. Junction
Temperature, VOUT = 1.8 V
120
2.8560
2.8373
2.8187
2.8000
2.7813
2.7627
2.7440
−40
VIN = 3.3 V,
CIN = COUT = 1 mF,
Cnoise = 10 nF
−20 0 20 40 60 80 100 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Output Voltage vs. Junction
Temperature, VOUT = 2.8 V
3.06
3.04
3.02
3.00
2.98
2.96
2.94
−40
VIN = 3.5 V,
CIN = COUT = 1 mF,
Cnoise = 10 nF
−20 0 20 40 60 80 100 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Output Voltage vs. Junction
Temperature, VOUT = 3.0 V
http://onsemi.com
5
5 Page 
NCP700B
TYPICAL CHARACTERISTICS
4.0
VIN = 3.5 V
VIN = 2.5 V
3.5
3.0
2.5
1.810
1.805
1.800
1.795
1.790
1.785
1.780 0
COUT = 1 mF, VIN = 2.5 V, Cnoise = 100 nF,
IOUT = 30 mA, dVIN/dt = 1 V / 1 ms
20 40 60 80 100 120 140 160 180
t, TIME (ms)
Figure 30. Line Transient Response,
VOUT = 1.8 V, COUT = 1 mF, IOUT = 30 mA
200
4.0
VIN = 3.5 V
VIN = 2.5 V
3.5
3.0
2.5
1.810
1.805
1.800
1.795
1.790
1.785
1.780
COUT = 1 mF, VIN = 2.5 V,
Cnoise = 100 nF, IOUT = 200 mA,
dVIN/dt = 1 V / 1 ms
0 20 40 60 80 100 120 140 160 180
t, TIME (ms)
Figure 31. Line Transient Response,
VOUT = 1.8 V, COUT = 1 mF, IOUT = 200 mA
200
5.0
VIN = 4.5 V
VIN = 3.5 V
4.5
4.0
3.5
3.010
3.005
3.000
2.995
2.990
2.985
2.980
0
COUT = 1 mF, VIN = 3.5 V,
Cnoise = 100 nF, IOUT = 30 mA,
dVIN/dt = 1 V / 1 ms
20 40 60 80 100 120 140 160 180
t, TIME (ms)
Figure 32. Line Transient Response,
VOUT = 3.0 V, COUT = 1 mF, IOUT = 30 mA
200
http://onsemi.com
11
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet NCP700B.PDF ] | |
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