|
|
Numéro de référence | IPI100N04S4-H2 | ||
Description | OptiMOS-T2 Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
2.4 mW
100 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB100N04S4-H2
IPI100N04S4-H2
IPP100N04S4-H2
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N04H2
4N04H2
4N04H2
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=50A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
100
100
400
280
100
±20
115
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2012-07-02
|
|||
Pages | Pages 9 | ||
Télécharger | [ IPI100N04S4-H2 ] |
No | Description détaillée | Fabricant |
IPI100N04S4-H2 | OptiMOS-T2 Power-Transistor | Infineon Technologies |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |