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IPP100N04S3-03 fiches techniques PDF

Infineon Technologies - OptiMOS-T Power-Transistor

Numéro de référence IPP100N04S3-03
Description OptiMOS-T Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPP100N04S3-03 fiche technique
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OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB100N04S3-03
IPI100N04S3-03, IPP100N04S3-03
Product Summary
V DS
R DS(on) (SMD Version)
ID
40 V
2.5 m
100 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB100N04S3-03
IPI100N04S3-03
IPP100N04S3-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3PN0403
3PN0403
3PN0403
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
100
100
400
898
±20
214
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2007-05-03

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