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IPB081N06L3G fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPB081N06L3G
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPB081N06L3G fiche technique
Type
OptiMOS3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
Product Summary
VDS
RDS(on),max (SMD)
ID
60 V
8.1 mΩ
50 A
Type
IPB081N06L3 G
IPP084N06L3 G
IPI084N06L3 G
Package
Marking
PG-TO263-3
081N06L
PG-TO220-3
084N06L
PG-TO262-3
084N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
Power dissipation
Operating and storage temperature
I D T C=25 °C2)
T C=100 °C
I D,pulse T C=25 °C
E AS I D=50 A, R GS=25 Ω
V GS
P tot T C=25 °C
T j, T stg
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=1.9 K/W the chip is able to carry 73 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
50
50
200
43
±20
79
-55 ... 175
Unit
A
mJ
V
W
°C
Rev. 2.24
page 1
2012-11-28

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