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PDF CEM11C2 Data sheet ( Hoja de datos )
| Número de pieza | CEM11C2 | |
| Descripción | Dual Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
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CEM11C2
Jul. 2002
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
5 FEATURES
30V ,7A , RDS(ON)=30mΩ @VGS=10V.
RDS(ON)=42mΩ @VGS=4.5V.
-20V , -4.3A , RDS(ON)=90mΩ @VGS=-4.5V.
RDS(ON)=120mΩ @VGS=-2.5V.
Super high dense cell design for extremely low RDS(ON).
D1 D1 D2 D2
87 65
High power and current handing capability.
Surface Mount Package.
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @TJ=125 C
-Pulsed b
Drain-Source Diode Forward Currenta
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol N-Channel P-Channel
VDS 30 -20
VGS Ć20 Ć8
ID Ć 7 Ć4.3
IDM Ć30 Ć17
IS 2.3 -4.3
PD 2.0
TJ, TSTG
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
62.5
C/W
5-148
1 page  
CEM11C2
N-Channel
5 1.09
1.06
1.03
VDS=VGS
ID=250ijA
1.15
ID=-250ijA
1.10
1.05
5
1.00 1.00
0.97 0.95
0.94
0.91
-50 -25 0 25 50 75 100 125 150
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
15
VDS=15V
12
9
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
30.0
10.0
6
3
0
0 5 10 15 20
IDS, Drain-Source Current (A)
Figure 7. Transconductance Variation
with Drain Current
1.0
0.4 0.6
0.8 1.0
1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
5-152
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet CEM11C2.PDF ] | |
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