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Numéro de référence | 2SA1668 | ||
Description | POWER TRANSISTOR | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1668
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
·DC Current Gain-
: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A)
·Complement to Type 2SC4382
APPLICATIONS
·Designed for TV vertical output ,audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-2 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
-1 A
25 W
150 ℃
-55~150 ℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SA1668 ] |
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