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Inchange Semiconductor - POWER TRANSISTOR

Numéro de référence 2SA1668
Description POWER TRANSISTOR
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1668 fiche technique
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1668
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
·DC Current Gain-
: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A)
·Complement to Type 2SC4382
APPLICATIONS
·Designed for TV vertical output ,audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-2 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
-1 A
25 W
150
-55~150
isc Websitewww.iscsemi.cn

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