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2SA815 fiches techniques PDF

Inchange Semiconductor - POWER TRANSISTOR

Numéro de référence 2SA815
Description POWER TRANSISTOR
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA815 fiche technique
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA814 2SA815
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1624/1625
·High breakdown voltage
APPLICATIONS
·Medium power amplifier applications
·Driver stage amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SA814
2SA815
Open emitter
VCEO
Collector-emitter voltage
2SA814
2SA815
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
IE Emitter current
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-120
-100
-120
-100
-5
-1
1
15
150
-55~150
UNIT
V
V
V
A
A
W

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