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2SA1006B fiches techniques PDF

Inchange Semiconductor - POWER TRANSISTOR

Numéro de référence 2SA1006B
Description POWER TRANSISTOR
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1006B fiche technique
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1006 2SA1006A 2SA1006B
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2336,
2SC2336A,2SC2336B
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
2SA1006
VCBO
Collector-base voltage
2SA1006A Open emitter
2SA1006B
2SA1006
VCEO
Collector-emitter voltage
2SA1006A
2SA1006B
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-Peak
PT Total power dissipation
Ta=25
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-180
-200
-250
-180
-200
-250
-5
-1.5
-3.0
1.5
25
150
-55~150
UNIT
V
V
V
A
A
W

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