DataSheetWiki


2SA1107 fiches techniques PDF

Inchange Semiconductor - POWER TRANSISTOR

Numéro de référence 2SA1107
Description POWER TRANSISTOR
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





2SA1107 fiche technique
www.DataSheet4U.net
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1107
DESCRIPTION
·With MT-200 package
·High power dissipations
APPLICATIONS
·Audio and general purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-150
-150
-5
-10
120
150
-55~150
UNIT
V
V
V
A
W

PagesPages 3
Télécharger [ 2SA1107 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SA1102 PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) Wing Shing Computer Components
Wing Shing Computer Components
2SA1102 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SA1102 POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor
2SA1102 Bipolar New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche