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Numéro de référence | 2SA1107 | ||
Description | POWER TRANSISTOR | ||
Fabricant | Inchange Semiconductor | ||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1107
DESCRIPTION
·With MT-200 package
·High power dissipations
APPLICATIONS
·Audio and general purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-150
-150
-5
-10
120
150
-55~150
UNIT
V
V
V
A
W
℃
℃
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Pages | Pages 3 | ||
Télécharger | [ 2SA1107 ] |
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