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Numéro de référence | 2SA1117 | ||
Description | POWER TRANSISTOR | ||
Fabricant | Inchange Semiconductor | ||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1117
DESCRIPTION
·With TO-3 package
·High power dissipations
APPLICATIONS
·For power switching amplifier and
general purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IBB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-200
-200
-6
-17
-5
200
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
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Pages | Pages 3 | ||
Télécharger | [ 2SA1117 ] |
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