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Inchange Semiconductor - POWER TRANSISTOR

Numéro de référence 2SA1170
Description POWER TRANSISTOR
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1170 fiche technique
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1170
DESCRIPTION
·With MT-200 package
·High power dissipation
·Complement to type 2SC2774
APPLICATIONS
·Audio and general purpose applications
PINNING (see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IBB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-200
-200
-6
-17
-5
200
150
-55~150
UNIT
V
V
V
A
A
W

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