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Numéro de référence | 2SA1186 | ||
Description | POWER TRANSISTOR | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1186
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min)
·Good Linearity of hFE
·Complement to Type 2SC2837
APPLICATIONS
·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -10 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-2 A
100 W
150 ℃
-55~150
℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SA1186 ] |
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