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2SA1186 fiches techniques PDF

Inchange Semiconductor - POWER TRANSISTOR

Numéro de référence 2SA1186
Description POWER TRANSISTOR
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1186 fiche technique
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1186
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min)
·Good Linearity of hFE
·Complement to Type 2SC2837
APPLICATIONS
·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -10 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-2 A
100 W
150
-55~150
isc Websitewww.iscsemi.cn

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