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PDF L508 Data sheet ( Hoja de datos )

Número de pieza L508
Descripción High Voltage Diode Rectifier Module
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! L508 Hoja de datos, Descripción, Manual

HTZ110A Series
IF(AV) = 3.5 A
VRRM = 25000 V
High Voltage
Diode Rectifier
Module
Type
Number
HTZ110A25K
HTZ110A22K
HTZ110A19K
HTZ110A16K
Repetitive
Peak
25000
22000
19000
16000
Minimum
Avalanche
Voltage
V(BR)R
27200
24000
20800
17600
CIRCUIT DIAGRAM
+
-V RR M -
_
LARONTROL
Electronic Devices
Centre Tap
CURRENT RATINGS - AIR COOLED
IF(AV)
IF
Rth(j-a)
Mean forward current
Continuous (direct) forward current
Thermal resistance junction to ambient
Half wave resistive load Tamb = 35ºC
Tamb = 35ºC
3.5 A
4.3 A
2.3 ºC/W
CURRENT RATINGS - OIL COOLED
IF(AV)
IT
Rth(j-o)
Mean forward current
Continuous (direct) forward current
Thermal resistance junction to oil
Half wave resistive load Toil = 60ºC
Toil = 60ºC
5.7 A
7.0 A
0.93 ºC/W
SURGE RATINGS
I2t I2t for fusing
IFSM Surge (non-repetitive) forward current
10 ms half sine Tvj = 150ºC
Tvj = 150ºC
200 A2sec
200 A
TEMPERATURE AND FREQUENCY RATINGS
Tvj Virtual junction temperature
Tstg Storage temperature range
f Frequency range
Forward (conducting)
Reverse (blocking)
180
180
-40 to 100
20 to 400
ºC
ºC
ºC
Hz
CHARACTERISTICS Tcase = 25ºC unless otherwise stated
VFM Forward voltage
At 12 Amps peak
IRM Peak reverse current
At VRRM; Tcase = 150°C
max 18.3 V
max 0.5 mA
Dimensioned Outlines
Dimensions shown are maximum in mm
Weight typ.: 1,55 Kg
6.8 DIA
BOTH ENDS
300
150 150
48
348
TAPPED M6, 3 OFF
IXYS reserves the right to change limits, test conditions and dimensions.
Distributed by
USA
3540 Bassett Street
Santa Clara, CA 95054
Phone: (408) 982-0700
FAX: (408) 496-0670
EUROPE
IXYS Semiconductor GmbH
Lampertheim Germany
Phone: +49.6206.503.0
Fax: +49.6206.503.627
368
48
ZA
Issue 1 June 1998
www.IXYS.com

1 page





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