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PDF YG862C15R Data sheet ( Hoja de datos )

Número de pieza YG862C15R
Descripción High Voltage Schottky barrier diode
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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YG862C15R (10A)
High Voltage Schottky barrier diode
Major characteristics
Characteristics YG862C15R Units Condition
VRRM 150 V
VF
0.90
V Tc=25°C MAX.
IO 10 A
Features
Low VF
High Voltage
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
(150V / 10A )
[0401]
Outline drawings, mm
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1 23
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
Package : TO-220F
Epoxy resin UL : V-0
Connection diagram
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
12
Rating
3
Unit
Repetitive peak surge reverse voltage VRSM
tw=500ns, duty=1/40
150
V
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
VRRM
Viso
Io
IFSM
Tj
Terminals-to-Case,
AC.1min
Square wave, duty=1/2
Tc=116°C
Sine wave
10ms 1shot
150
1500
10 *
75
+150
V
V
A
A
°C
Storage temperature
Tstg
-40 to +150
°C
* Out put current of center tap full wave connection
**Rating per element
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop
VF IFM=5A
0.90 V
Reverse current
Thermal resistance
IR
Rth(j-c)
VR=VRRM
Junction to case
150 µA
3.0 °C/W
Mechanical characteristics
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Recommended torque
0.3 to 0.5
N·m
Approximate mass
2g

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