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PDF RMTR10300 Data sheet ( Hoja de datos )
| Número de pieza | RMTR10300 | |
| Descripción | 10-30 GHz Tripler MMIC | |
| Fabricantes | Raytheon | |
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RMTR10300
10-30 GHz Tripler MMIC
Description
ADVANCED INFORMATION
The RMTR10300 is a 10 to 30 GHz Tripler designed to be used in the LO chain of point to point radios, point to
multi-point communications, LMDS, and other millimeter wave applications. The RMTR10300 is a three stage
amplifier in which the first stage acts as a harmonic generator followed by two stages of amplification at 3Fo. The
RMTR10300 utilizes Raytheon’s advanced 0.15 µm gate length PHEMT process and is sufficiently versatile to serve
in a variety of multiplier applications.
Features
2 mil substrate
Conversion Loss 0 dBm (typ.)
Wide operating bandwidth
Chip size 3.224 mm x 1.134 mm
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage (+5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
Id
PIN
TC
Tstg
Rjc
Value
+6
-2
+8
187
+22
-30 to +85
-55 to +125
117
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C), 50 Ω system,
Vd = +5 V, Quiescent
current (Idq)= 75 mA,
Pin=+17 dBm
Parameter
Input Frequency Range
Output Frequency Range
Gate Supply Voltage (Vg)1
Input Drive Power @ Fo
Output Power @ 3Fo
Min
9
27
+15
Typ Max Unit
10.75 GHz
32.25 GHz
- 0.2 V
+17 dBm
+17 dBm
Parameter
Min Typ Max Unit
Conversion Loss
0 dBm
Fundamental Rejection
-30 dBc
2nd Harmonic Rejection
-15 dBc
4th Harmonic Rejection
-25 dBc
Input Return Loss
8 dB
Output Return Loss
7 dB
www.DataSheet4U.com
Note: 1. Typical range of the negative gate voltage is -0.5 to 0.0V to set typical Idq of 75 mA.
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised April 6, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
1 page  
RMTR10300
10 – 30 GHz Tripler MMIC
Performance
Data
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
8
ADVANCED INFORMATION
RMTR10300 Fixtured Data
Vd = 5V Vg = -0.2V Id = 75mA w/o RF
All Gates and Drains Separated on chip
Pin = 17 dBm
Pfo
P2fo
P3fo
P4fo
8.5 9 9.5 10 10.5 11 11.5 12
Input Frequency (GHz)
RMTR10300 Fixtured Data
Vd = 5V Vg = -0.2V Id = 75mA w/o RF
All Gates and Drains Separated on chip (S)
Pin = 15, 17 & 19 dBm
20
15
10
P3fo_15 dBm
P3fo_17 dBm
5 P3fo_19 dBm
0
8 8.5 9 9.5 10 10.5 11 11.5 12
Input Frequency (GHz)
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised April 6, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RMTR10300.PDF ] | |
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