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2N5912 fiches techniques PDF

Micross - High Gain

Numéro de référence 2N5912
Description High Gain
Fabricant Micross 
Logo Micross 





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2N5912 fiche technique
2N5912
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5912
The 2N5912 are monolithic dual JFETs. The monolithic
dual chip design reduces parasitics and gives better
performance at very high frequencies while ensuring
extremely tight matching. These devices are an
excellent choice for use as wideband differential
amplifiers in demanding test and measurement
applications. The 2N5912 is a direct replacement for
discontinued Siliconix and National 2N5912.
FEATURES 
Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 
LOW NOISE (10KHz) 
HIGH TRANSCONDUCTANCE (100MHz) 
ABSOLUTE MAXIMUM RATINGS 1 
en~ 4nV/Hz 
gfs ≥ 4000µS 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
The hermetically sealed TO-71 is well suited for military
and harsh environment applications.
(See Packaging Information).
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation (Total) 
65°C to +150°C 
55°C to +135°C 
500mW 
2N5912 Applications:
ƒ Wideband Differential Amps
ƒ High-Speed,Temp-Compensated Single-
Ended Input Amps
ƒ High-Speed Comparators
ƒ Impedance Converters and vibrations
detectors.
Maximum Currents 
Gate Current 
Maximum Voltages 
Gate to Drain 
Gate to Source 
 
 
50mA 
25V 
25V 
 
 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN  TYP  MAX  UNITS  CONDITIONS 
|VGS1  VGS2 | 
Differential Gate to Source Cutoff Voltage 
‐‐  ‐‐ 
|VGS1  VGS2 | / ∆T 
 
Differential Gate to Source Cutoff  
Voltage Change with Temperature 
‐‐  ‐‐ 
IDSS1  / IDSS2 
 
|IG1  IG2 | 
Click Togfs1 / gfs2 
Gate to Source Saturation Current Ratio 
Differential Gate Current 
Forward Transconductance Ratio2 
0.95 
‐‐ 
0.95 
‐‐ 
‐‐ 
‐‐ 
15  mV  VDG = 10V, ID = 5mA           
40  µV/°C  VDG = 10V, ID = 5mA      
TA = ‐55°C to +125°C 
Buy1  %  VDS = 10V, VGS = 0V 
20  nA  VDG = 10V, ID = 5mA      
TA = +125°C  
1  %  VDS = 10V, ID = 5mA, f = 1kHz 
 
CMRR 
Common Mode Rejection Ratio 
‐‐  85 
‐‐ 
dB  VDG = 5V to 10V, ID = 5mA         
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
BVGSS 
VGS(off) 
VGS(F) 
VGS 
IDSS 
IGSS 
IG 
Gate to Source Breakdown Voltage 
Gate to Source Cutoff Voltage 
Gate to Source Forward Voltage 
Gate to Source Voltage 
Gate to Source Saturation Current3 
Gate Leakage Current3 
Gate Operating Current 
25 
1 
‐‐ 
0.3 
7 
‐‐ 
‐‐ 
TYP. 
‐‐ 
‐‐ 
0.7 
‐‐ 
‐‐ 
1 
1 
MAX. 
 
5 
‐‐ 
4 
40 
50 
50 
UNITS 
 
V 
 
mA 
 
pA 
CONDITIONS 
IG = ‐1µA, VDS = 0V 
VDS = 10V, ID = 1nA 
IG =  1mA, VDS = 0V 
VDG = 10V, IG = 5mA 
VDS = 10V, VGS = 0V 
VGS = ‐15V, VDS = 0V 
VDG = 10V, ID = 5mA 
gfs 
Forward Transconductance 
4000 
‐‐  10000 
 
4000 
‐‐  10000  µS 
gos 
Output Conductance 
‐‐ 
‐‐  100 
 
‐‐  ‐‐  150 
 
VDG = 10V, ID= 5mA 
CISS 
Input Capacitance 
‐‐  ‐‐  5  pF 
VDG = 10V, ID = 5mA, f = 1MHz 
CRSS 
Reverse Transfer Capacitance 
‐‐ 
‐‐  1.2 
 
NF 
Noise Figure 
‐‐  ‐‐  1  dB  VDG = 10V, ID = 5mA, f = 10kHz, RG = 100KΩ 
en 
Equivalent Input Noise Voltage 
‐‐ 
7  20  nV/Hz 
VDG = 10V, ID = 5mA, f = 100Hz 
‐‐  4  10 
VDG = 10V, ID = 5mA, f = 10kHz 
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired      2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator 
 
Available Packages:
TO-71 (Top View)
 
Please contact Micross for full package and die dimensions:
2N5912 in TO-71
2N5912 available as bare die
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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